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Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects

Type:
Journal
Info:
phys. stat. sol. (a) 202, No. 14, R164–R166 (2005)
Date:
2005-10-20
DOI:
http://dx.doi.org/10.1002/pssa.200521296

Author Information

Name Institution
Yong Tae KimKorea Institute of Science and Technology
Ji Ho ParkKorea Institute of Science and Technology

Films

Plasma WCN

Hardware used: Custom
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
N2, Nitrogen
CAS#: 7727-37-9
CH4, Methane
CAS#: 74-82-8
Deposition Temperature Range N/A

Plasma WCN

Hardware used: Custom
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
NH3, Ammonia
CAS#: 7664-41-7
CH4, Methane
CAS#: 74-82-8
Deposition Temperature Range N/A

Plasma WN

Hardware used: Custom
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

SiO2

Notes

SiO2 surface pretreated with N2/H2 plasma prior to film deposition.
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