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Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A129 (2016)
Date:
2015-11-11
DOI:
http://dx.doi.org/10.1116/1.4936387

Author Information

Name Institution
Mengdi YangUniversity of Twente
Antonius A. I. AarninkUniversity of Twente
Alexey Y. KovalginUniversity of Twente
Dirk. J. GravesteijnUniversity of Twente
Rob A. M. WoltersUniversity of Twente
Jurriaan SchmitzUniversity of Twente

Films

Plasma W

Hardware used: Custom
WF6, Tungsten Hexafluoride
CAS#: 7783-82-6
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 315C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Polytec

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Fastscan/ICON

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EFTEM, Energy Filtered Transmission Electron Microscopy
Diagnostic: -

Substrates

W

Notes

Discusses using Te etching as a means to determine H-radical flux.
411