About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2020, 12 (3), pp 3873-3885
Date:
2019-12-27

Author Information

Name Institution
Shashank BalasubramanyamEindhoven University of Technology
Matthew A. BloodgoodEindhoven University of Technology
Mark van OmmerenEindhoven University of Technology
Tahsin FarazEindhoven University of Technology
Vincent VandalonEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
Ageeth A. BolEindhoven University of Technology

Films

Plasma WS2


Plasma WS2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: HAADF, High-Angle Annular Dark Field

Characteristic: Microstructure
Analysis: HAADF, High-Angle Annular Dark Field

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Substrates

SiO2

Notes

Full paper available in thesis.
1531