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Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy

Type:
Journal
Info:
IEICE Transactions on Electronics Vol.E98-C No.5 pp.382-389
Date:
2015-05-01
DOI:
http://search.ieice.org/bin/summary.php?id=e98-c_5_382

Author Information

Name Institution
P. Pungboon PansilaYamagata University
Kensaku KanomataYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma Ga2O3

Hardware used: Custom
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
H2O, Water
CAS#: 7732-18-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Silicon

Notes

524