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Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment

Type:
Journal
Info:
Journal of Semiconductors (2019) 40, 012806
Date:
2018-11-28
DOI:
http://dx.doi.org/10.1088/1674-4926/40/1/012806

Author Information

Name Institution
Hui HaoTaiyuan University of Technology
Xiao ChenChinese Academy of Sciences
Zhengcheng LiChinese Academy of Sciences
Yang ShenChinese Academy of Sciences
Hu WangChinese Academy of Sciences
Yanfei ZhaoChinese Academy of Sciences
Rong HuangChinese Academy of Sciences
Tong LiuChinese Academy of Sciences
Jian LiangTaiyuan University of Technology
Yuxin AnChinese Academy of Sciences
Qing PengChinese Academy of Sciences
Sunan DingChinese Academy of Sciences

Films

Plasma Ga2O3

Hardware used: Picosun R200
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F20 S-Twin

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe II

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe II

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: ION TOF TofSIMS 5

Substrates

Si(100)
GaN

Notes

1552