Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
Type:
Conference Proceedings
Info:
11th Topical Workshop on Heterostructure Microelectronics
Date:
2015-08-23
Author Information
| Name | Institution |
|---|---|
| P. Pungboon Pansila | Yamagata University |
| Kensaku Kanomata | Yamagata University |
| Shigeru Kubota | Yamagata University |
| Bashir Ahmmad | Yamagata University |
| Fumihiko Hirose | Yamagata University |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Surface Reactions
Analysis: ATR-FTIR
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| GaN |
Notes
| 393 |