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Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Acta Phys. Sin. Vol. 66, No. 9 (2017) 098101
Date:
2017-02-06
DOI:
http://dx.doi.org/10.7498/aps.66.098101

Author Information

Name Institution
Wen-Hui TangShandong University
Bang-Wu LiuInstitute of Microelectronics of Chinese Academy of Sciences
Bo-Cheng ZhangJiaxing Microelectronic Equipment
Min LiShandong University
Yang XiaInstitute of Microelectronics of Chinese Academy of Sciences

Films

Plasma GaN

Hardware used: Custom Remote Inductively Coupled Plasma
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 150-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Si(100)

Notes

Chinese paper with English abstract and figure labels
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