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Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride

Type:
Journal
Info:
IEEE J. Photovolt., Vol. 6, No. 4, July 2016, pp. 900-905
Date:
2016-06-01
DOI:
http://dx.doi.org/10.1109/JPHOTOV.2016.2566881

Author Information

Name Institution
Thomas G. AllenThe Australian National University
Yimao WanThe Australian National University
Andres CuevasThe Australian National University

Films

Plasma Ga2O3

Hardware used: Beneq TFS-200
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 75C

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 175C

Film/Plasma Properties

Characteristic: Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Substrates

Silicon

Notes

Paper available in chapter 3 of on-line thesis Addressing optical, recombination and resistive losses in crystalline silicon solar cells.
905