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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 022404 (2020)
Date:
2019-12-20
DOI:
http://dx.doi.org/10.1116/1.5134800

Author Information

Name Institution
Ali MahmoodinezhadBrandenburg University of Technology
Christoph JanowitzBrandenburg University of Technology
Franziska NaumannSentech Instruments GmbH
Paul PlateSentech Instruments GmbH
Hassan GargouriSentech Instruments GmbH
Karsten HenkelBrandenburg University of Technology
Dieter SchmeißerBrandenburg University of Technology
Jan Ingo FlegeBrandenburg University of Technology

Films

Plasma Ga2O3

Hardware used: SENTECH
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 80-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH ALD Real Time Monitor, ALD-RTM

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE850

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: SENTECH SE850

Characteristic: Optical Bandgap
Analysis: Ellipsometry
Diagnostic: SENTECH SE850

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Omicron EA125

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Custom

Substrates

Si with native oxide

Notes

1573