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Protective capping and surface passivation of III-V nanowires by atomic layer deposition

Type:
Journal
Info:
AIP ADVANCES 6, 015016 (2016)
Date:
2016-01-18
DOI:
http://dx.doi.org/10.1063/1.4941063

Author Information

Name Institution
Veer DhakaAalto University
Alexander Pyymaki PerrosAalto University
Shagufta NaureenThe Australian National University
Naeem ShahidThe Australian National University
Hua JiangAalto University
Joona-Pekko KakkoAalto University
Tuomas HaggrenAalto University
Esko KauppinenAalto University
Anand SrinivasanKTH Royal Institute of Technology
Harri LipsanenAalto University

Films

Plasma AlN

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Thermal TiN

Hardware used: Beneq TFS-500
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 425C

Thermal Al2O3

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Plasma GaN

Hardware used: Beneq TFS-500
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Thermal TiO2

Hardware used: Beneq TFS-500
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2200FS

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: JEOL 2200FS

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Custom

Substrates

GaAs
InP

Notes

1397