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Gallium nitride thin films by microwave plasma-assisted ALD

Type:
Journal
Info:
Optical Materials Express, v. 9, n. 11, p. 4187--4193 (2019)
Date:
2019-09-10
DOI:
http://dx.doi.org/10.1364/OME.9.004187

Author Information

Name Institution
F. Romo-GarcíaUniversidad de Sonora
H. J. Higuera-ValenzuelaUniversidad de Sonora
D. Cabrera-GermanUniversidad de Sonora
D. Berman-MendozaUniversidad de Sonora
A. Ramos-CarrazcoUniversidad de Sonora
O. E. ContrerasUniversidad Nacional Autónoma de México
R. García-GutierrezUniversidad de Sonora

Films

Plasma GaN

Hardware used: Custom Microwave Plasma
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 230C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-44

Characteristic: Optical Properties
Analysis: CL, Cathodoluminescence
Diagnostic: MonoCL4

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Specs PHOIBOS 100

Substrates

Si with native oxide

Notes

1693