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Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Chem. Mater. 2020, XXXX, XXX, XXX-XXX
Date:
2020-01-13

Author Information

Name Institution
Virginia D. WheelerU.S. Naval Research Laboratory
Neeraj NepalU.S. Naval Research Laboratory
David R. BorisU.S. Naval Research Laboratory
Syed B. QadriU.S. Naval Research Laboratory
Luke O. NyakitiTexas A&M University College Station
Andrew LangU.S. Naval Research Laboratory
Andrew D. KoehlerU.S. Naval Research Laboratory
Geoffrey FosterU.S. Naval Research Laboratory
Scott G. WaltonU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory
David J. MeyerU.S. Naval Research Laboratory

Films

Plasma Ga2O3


Plasma Ga2O3



CAS#: 7440-37-1

CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Strain
Analysis: XRD, X-Ray Diffraction

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: -

Characteristic: Magnetic Properties
Analysis: SQUID, Superconducting Quantum Interference Device

Substrates

Sapphire

Notes

1428