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Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(4), Jul/Aug 2014
Date:
2014-04-28
DOI:
http://dx.doi.org/10.1116/1.4875935

Author Information

Name Institution
Halit AltuntasCankiri Karatekin University
İnci DönmezBilkent University
Çağla ÖzgitBilkent University
Necmi BiyikliBilkent University

Films

Plasma Ga2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: FEI Tecnai G2 F30

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Anneal
Diagnostic: ATV-Unitherm RTA SRO-704

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Substrates

Si(111)

Notes

Substrates solvent cleaned.
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