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Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition

Type:
Journal
Info:
J. Mater. Chem. C, 2020, 8, 8457-8465
Date:
2020-05-22
DOI:
http://dx.doi.org/10.1039/D0TC02085K

Author Information

Name Institution
Polla RoufLinköping University
Nathan J. O'BrienLinköping University
Sydney C. ButteraCarleton University
Ivan MartinovicLinköping University
Babak BakhitLinköping University
Erik MartinssonLinköping University
Justinas PalisaitisLinköping University
Chih-Wei HsuLinköping University
Henrik PedersenLinköping University

Films

Plasma GaN

Hardware used: Picosun R200
Bis(µ-dimethylamino) tetrakis(dimethylamino) digallium
CAS#: 57731-40-5
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 130-280C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Stress
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Strain
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Optical Absorption
Analysis: Optical Absorption
Diagnostic: Custom

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan 3

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: FEI Titan 3

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Characteristic: Precursor Characterization
Analysis: DSC, Differential Scanning Calorimetry
Diagnostic: -

Substrates

Si(100)
4H n-SiC(0001)

Notes

1667