Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
Type:
Journal
Info:
Ceramics International 46 (2020) 5765-5772
Date:
2019-11-04
Author Information
| Name | Institution |
|---|---|
| Peng Qiu | University of Science and Technology |
| Huiyun Wei | University of Science and Technology |
| Yunlai An | University of Science and Technology |
| Qixin Wu | University of Science and Technology |
| Wenxin Du | University of Science and Technology |
| Zengxuan Jiang | University of Science and Technology |
| Lang Zhou | University of Science and Technology |
| Chuang Gao | University of Science and Technology |
| Sanjie Liu | University of Science and Technology |
| Yingfeng He | University of Science and Technology |
| Yimeng Song | University of Science and Technology |
| Mingzeng Peng | University of Science and Technology |
| Xinhe Zheng | University of Science and Technology |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Valence Band
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Characteristic: Work Function
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Characteristic: UV-Vis Transmission
Analysis: UV-VIS Spectroscopy
Substrates
| FTO, F:SnO2 |
Notes
| 1556 |