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TEG, triethyl galium, GaEt3, CAS# 1115-99-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 33 record(s).

NumberTitle
1Layer-by-layer epitaxial growth of GaN at low temperatures
2Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
3Self-Limiting Growth of GaN at Low Temperatures
4Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
5Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
6P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
7Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
8Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
9Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
10Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
11A route to low temperature growth of single crystal GaN on sapphire
12Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
13The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
14Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
15Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition
16P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
17Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
18Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
19Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
20Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3
21α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
22Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3