Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


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TEG, triethyl galium, GaEt3, CAS# 1115-99-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 33 record(s).

NumberTitle
1α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
2Layer-by-layer epitaxial growth of GaN at low temperatures
3A route to low temperature growth of single crystal GaN on sapphire
4Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
5Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
6Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
7Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
8The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
9Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
10Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
11Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
12P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
13Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3
14Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
15Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
16Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
17P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
18Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3
19Self-Limiting Growth of GaN at Low Temperatures
20Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
21Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition
22Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition