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Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Type:
Journal
Info:
Nanoscale Research Letters (2016) 11:235
Date:
2016-04-20
DOI:
http://dx.doi.org/10.1186/s11671-016-1448-z

Author Information

Name Institution
Huan-Yu ShihNational Taiwan University
Fu-Chuan ChuChang Gung University
Atanu DasChang Gung University
Chia-Yu LeeChang Gung University
Ming-Jang ChenNational Taiwan University
Ray-Ming LinChang Gung University

Films

Plasma Ga2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Rigaku TTRAX III

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

AlGaN

Notes

785