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A route to low temperature growth of single crystal GaN on sapphire

Type:
Journal
Info:
J. Mater. Chem. C, 2015, 3, 7428-7436
Date:
2015-06-22
DOI:
http://dx.doi.org/10.1039/C5TC01556A

Author Information

Name Institution
Pouyan MotamediUniversity of Alberta
Neda DaliliNational Institute for Nanotechnology, Alberta, Canada
Kenneth C. CadienUniversity of Alberta

Films

Plasma GaN

Hardware used: Kurt J Lesker ALD-150LX
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 275C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Hitachi HF 3300

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Hitachi HF 3300

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Hitachi NB 5000

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: Nanometrics HL5500

Characteristic: Mobility
Analysis: Hall Measurements
Diagnostic: Nanometrics HL5500

Characteristic: Transmittance
Analysis: Optical Transmission
Diagnostic: Perkin-Elmer lambda 1050 UV/Vis/NIR

Substrates

Sapphire

Notes

379