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Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films

Type:
Journal
Info:
Applied Physics Letters 116, 211601 (2020)
Date:
2020-05-08

Author Information

Name Institution
Sanjie LiuUniversity of Science and Technology
Gang ZhaoHunan Normal University
Yingfeng HeUniversity of Science and Technology
Yangfeng LiChinese Academy of Sciences
Huiyun WeiUniversity of Science and Technology
Peng QiuUniversity of Science and Technology
Xinyi WangUniversity of Science and Technology
Xixi WangUniversity of Science and Technology
Jiadong ChengUniversity of Science and Technology
Mingzeng PengUniversity of Science and Technology
Francisco ZaeraUniversity of California - Riverside
Xinhe ZhengUniversity of Science and Technology

Films

Plasma GaN

Hardware used: Angstrom-dep III PEALD


CAS#: 7727-37-9

CAS#: 1333-74-0

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Electron Mobility
Analysis: Hall Measurements

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Characteristic: Electron Concentration
Analysis: Hall Measurements

Substrates

Sapphire

Notes

1498