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Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3

Type:
Journal
Info:
Applied Physics Letters 122, 092101 (2023)
Date:
2023-02-10
DOI:
http://dx.doi.org/10.1063/5.0139725

Author Information

Name Institution
Elias KluthOtto-von-Guericke University
Michael FayUniversity of Nottingham
Christopher ParmenterUniversity of Nottingham
Joseph W. RobertsUniversity of Liverpool
Emily SmithUniversity of Nottingham
Craig StoppielloUniversity of Nottingham
Fabien C-P. MassabuauUniversity of Strathclyde
Rüdiger GoldhahnOtto-von-Guericke University
Martin FenebergOtto-von-Guericke University

Films

Plasma Ga2O3

Hardware used: Oxford Instruments OpAL
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma GaTiOx

Hardware used: Oxford Instruments OpAL
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Dielectric Function
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Substrates

Sapphire

Notes

1675