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Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition

Type:
Journal
Info:
Nanotechnology 26 (2015) 014002 (7pp)
Date:
2014-09-29
DOI:
http://dx.doi.org/10.1088/0957-4484/26/1/014002

Author Information

Name Institution
Huan-Yu ShihNational Taiwan University
Ming-Chih LinTaiwan Textile Research Institute
Liang-Yih ChenNational Taiwan University of Science and Technology
Miin-Jang ChenNational Taiwan University

Films

Plasma GaN

Hardware used: Custom Remote Inductively Coupled Plasma
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
NH3, Ammonia
CAS#: 7664-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 200-500C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku TTRAX III

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: NT-MDT Solver P47SPM

Substrates

Si(100)

Notes

Ultratech Fiji PEALD GaN film development.
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