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Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2020, 12 (39), pp 44225-44237
Date:
2020-08-31
DOI:
http://dx.doi.org/10.1021/acsami.0c08477

Author Information

Name Institution
Elham Rafie BorujenyUniversity of Alberta
Oles SendetskyiUniversity of Alberta
Michael D. FleischauerUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma Ga2O3

Hardware used: Kurt J Lesker ALD-150LX
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 130-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Band Gap
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Ultima IV

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance
Diagnostic: Keithley 4200-SCS

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Themis

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: FEI Themis

Substrates

Sapphire
Si(100)
Si(111)
Si(110)

Notes

1512