Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2013 volume 2, issue 12, P524-P528
Date:
2013-10-12
Author Information
| Name | Institution |
|---|---|
| Jhih-Jie Huang | National Taiwan University |
| Meng-Chen Tsai | National Taiwan University |
| Li-Tien Huang | National Taiwan University |
| Min-Hung Lee | National Taiwan University |
| Miin-Jang Chen | National Taiwan University |
Films
Plasma ZrO2
Plasma Al2O3
Plasma AlON
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Notes
| Substrates HF dipped. |
| 133 |