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AlON Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing AlON films returned 14 record(s).

NumberTitle
1Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
2Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
3Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
4Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
5Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
6Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
7Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
8Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
9Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
10Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
11Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
12Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
13Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
14Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition