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Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3

Type:
Journal
Info:
RSC Adv., 2017, 7, 11745-11751
Date:
2017-02-12
DOI:
http://dx.doi.org/10.1039/C6RA27190A

Author Information

Name Institution
Qian WangChinese Academy of Sciences
Xinhong ChengChinese Academy of Sciences
Li ZhengChinese Academy of Sciences
Lingyan ShenChinese Academy of Sciences
Jingjie LiChinese Academy of Sciences
Dongliang ZhangChinese Academy of Sciences
Ru QianChinese Academy of Sciences
Yuehui YuChinese Academy of Sciences

Films

Plasma AlON

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

AlGaN

Notes

995