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Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell

Type:
Journal
Info:
Surface & Coatings Technology 307, Part B (2016) 1096 - 1099
Date:
2016-05-19
DOI:
http://dx.doi.org/10.1016/j.surfcoat.2016.05.057

Author Information

Name Institution
Young Joon ChoChungnam National University
Hamchorom ChaChungnam National University
Hyo Sik ChangChungnam National University

Films

Other AlON

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Thermal Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Diagnostic: -

Characteristic: Open Circuit Voltage
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Substrates

Silicon

Notes

824