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In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Type:
Journal
Info:
Applied Surface Science 387 (2016) 274 - 279
Date:
2016-06-13
DOI:
https://doi.org/10.1016/j.apsusc.2016.06.071

Author Information

Name Institution
Meng-Chen TsaiNational Taiwan University
Min-Hung LeeNational Taiwan Normal University
Chin-Lung KuoNational Taiwan University
Hsin-Chih LinNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films

Plasma ZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma ZrON

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
O2, Oxygen
CAS#: 7782-44-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(100)
ZrO2
ZrON

Notes

865