Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide, CAS# 19756-04-8

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 39 record(s).

NumberTitle
1AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
2Sub-7-nm textured ZrO2 with giant ferroelectricity
3Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys
4Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte
5Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
6Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate
7Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
8Lithium-Iron (III) Fluoride Battery with Double Surface Protection
9Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
10Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
11ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
12Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
13Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
14Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
15Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
16Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
17Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
18Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte
19Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
20Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
21Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
22Nonvolatile Capacitive Crossbar Array for In-Memory Computing
23Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
24Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
25Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells
26Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
27Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
28Single-Cell Photonic Nanocavity Probes
29Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
30Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy
31Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
32Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
33In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
34The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
35In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
36Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
37Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
38Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
39Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition