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Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs

Type:
Conference Proceedings
Info:
CS MANTECH Conference, May 18th - 21st, 2015
Date:
2015-05-18
DOI:
http://www.csmantech.org/Digests/2015/papers/9.4-051.pdf

Author Information

Name Institution
Kyle BotheUniversity of Alberta
A. MaUniversity of Alberta
Amir AfsharUniversity of Alberta
Pouyan MotamediUniversity of Alberta
Kenneth C. CadienUniversity of Alberta
Douglas W. BarlageUniversity of Alberta

Films

Plasma ZrO2

Hardware used: Kurt J Lesker ALD-150L
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Plasma AlN

Hardware used: Kurt J Lesker ALD-150L
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Contact Resistance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Notes

362