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Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN

Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:60, Issue:12, 2013
Date:
2013-10-09
DOI:
http://dx.doi.org/10.1109/TED.2013.2283802

Author Information

Name Institution
Kyle BotheUniversity of Alberta
P. A. von HauffUniversity of Alberta
Amir AfsharUniversity of Alberta
A. Foroughi-AbariUniversity of Alberta
Kenneth C. CadienUniversity of Alberta
Douglas W. BarlageUniversity of Alberta

Films

Plasma HfO2

Hardware used: Kurt J Lesker ALD-150LX
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Plasma ZrO2

Hardware used: Kurt J Lesker ALD-150LX
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Mobility
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

GaN

Notes

608