Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
Type:
Journal
Info:
Applied Physics Letters 116, 032901 (2020)
Date:
2020-01-11
Author Information
| Name | Institution |
|---|---|
| Glen Walters | University of Florida |
| Aniruddh Shekhawat | University of Florida |
| Saeed Moghaddam | University of Florida |
| Jacob L. Jones | North Carolina State University |
| Toshikazu Nishida | University of Florida |
Films
Thermal HfZrO2
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
CAS#: 19962-11-9
CAS#: 19756-04-8
CAS#: 7732-18-5
Plasma HfZrO2
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
CAS#: 19962-11-9
CAS#: 19756-04-8
CAS#: 7782-44-7
Plasma HfZrO2
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
CAS#: 19962-11-9
CAS#: 19756-04-8
CAS#: 7782-44-7
CAS#: 1333-74-0
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Ferroelectricity
Analysis: Custom
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Substrates
| Silicon |
| TiN |
Notes
| 1453 |