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Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A138 (2016)
Date:
2015-12-01
DOI:
http://dx.doi.org/10.1116/1.4937991

Author Information

Name Institution
J ProvineStanford University
Peter SchindlerStanford University
Jan TorgersenUniversity of Vienna
Hyo Jin KimStanford University
Hans-Peter KarnthalerStanford University
Fritz B. PrinzStanford University

Films

Thermal TiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-250C

Thermal TiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Plasma TiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Thermal HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Thermal HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Plasma HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Thermal ZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Thermal ZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Plasma ZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan ETEM

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan ETEM

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Substrates

Si(100)

Notes

442