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Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2022, 14 (47), pp 53057-53064
Date:
2022-10-25
DOI:
http://dx.doi.org/10.1021/acsami.2c15047

Author Information

Name Institution
Zhouchangwan YuStanford University
Simarjeet S SainiStanford University
Zhongwei LiuStanford University
Yue-Lin HuangStanford University
Apurva MehtaSLAC National Accelerator Laboratory
John D. BanieckiSLAC National Accelerator Laboratory
Yuen-Yee WongStanford University
Yi-Jen TsaiStanford University
Paul C. McIntyreStanford University

Films

Plasma HfZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-250C

Film/Plasma Properties

Characteristic: Ferroelectricity
Analysis: P-V, Polarization-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Synchrotron

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Substrates

TiN

Notes

1704