Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

Type:

Journal

Info:

Journal of Vacuum Science & Technology A 33, 060603 (2015)

Date:

2015-06-24

DOI:

http://dx.doi.org/10.1116/1.4926382

Author Information

Name	Institution
Triratna Muneshwar	University of Alberta
Kenneth C. Cadien	University of Alberta

CAS#: 19756-04-8

CAS#: 7727-37-9

CAS#: 1333-74-0

Deposition Temperature = 150C

Characteristic: Thickness

Analysis: Ellipsometry

Diagnostic: J.A. Woollam M-2000D

Characteristic: Resistivity, Sheet Resistance

Analysis: van der Pauw sheet resistance

Diagnostic: Keithley 4200-SCS

Si(111)
SiO₂

369