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Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure

Type:
Journal
Info:
Materials Chemistry and Physics Volume 184, 1 December 2016, Pages 291-297
Date:
2016-09-17
DOI:
http://dx.doi.org/10.1016/j.matchemphys.2016.09.054

Author Information

Name Institution
Wei-Cheng WangNational Taiwan University
Meng-Chen TsaiNational Taiwan University
Yi-Ping LinNational Taiwan University
Yi-Jen TsaiNational Taiwan University
Hsin-Chih LinNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films

Plasma ZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: -
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Notes

971