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Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

Type:
Journal
Info:
Crystals 2020, 10, 136
Date:
2020-02-20
DOI:
http://dx.doi.org/10.3390/cryst10020136

Author Information

Name Institution
Zhigang XiaoAlabama A&M University
Kim KisslingerBrookhaven National Laboratory
Sam ChanceAlabama A&M University
Samuel BanksAlabama A&M University

Films

Plasma HfO2

Hardware used: Kurt J Lesker ALD-150LX
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 270C

Plasma ZrO2

Hardware used: Kurt J Lesker ALD-150LX
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1 MWE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1 MWE

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1 MWE

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Ultima III

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

SiO2

Notes

1456