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Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks

Type:
Conference Proceedings
Info:
ECS Transactions, 33 (2) 69-82 (2010)
Date:
2010-10-01
DOI:
http://dx.doi.org/10.1149/1.3485243

Author Information

Name Institution
Aileen O'MahonyTyndall National Institute, University College Cork
Scott MonaghanTyndall National Institute, University College Cork
R. ChiodoTyndall National Institute, University College Cork
Ian M. PoveyTyndall National Institute, University College Cork
Karim CherkaouiTyndall National Institute, University College Cork
R. E. NagleTyndall National Institute, University College Cork
É. O'ConnorTyndall National Institute, University College Cork
R. D. LongTyndall National Institute, University College Cork
Vladamir DjaraTyndall National Institute, University College Cork
Dan O'ConnellTyndall National Institute, University College Cork
F. CrupiUniversità  della Calabria
Martin E. PembleTyndall National Institute, University College Cork
Paul K. HurleyTyndall National Institute, University College Cork

Films

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Thermal MgO

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
bis(cyclopentadienyl)Magnesium, MgCp2
CAS#: 1284-72-6
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Thermal HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Thermal ZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Frequency Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

GaAs
InGaAs

Notes

CV and IV work compare annealed and non-annealed samples.
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