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AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments

Type:
Journal
Info:
Journal of Applied Physics 119, 085306 (2016)
Date:
2016-02-08
DOI:
http://dx.doi.org/10.1063/1.4942439

Author Information

Name Institution
Triratna MuneshwarUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma HfO2

Hardware used: Kurt J Lesker ALD-150L
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Plasma ZrN

Hardware used: Kurt J Lesker ALD-150L
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
H2, Hydrogen
CAS#: 1333-74-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 150C

Thermal Al2O3

Hardware used: Kurt J Lesker ALD-150L
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Substrates

Notes

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