ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
Type:
Journal
Info:
Applied Physics Letters 102, 251601 (2013)
Date:
2013-06-09
Author Information
| Name | Institution |
|---|---|
| P. A. von Hauff | University of Alberta |
| Amir Afshar | University of Alberta |
| A. Foroughi-Abari | University of Alberta |
| Kyle Bothe | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
| Douglas W. Barlage | University of Alberta |
Films
Plasma ZrO2
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GaN |
Notes
| 625 |