Suppression of GeO_x interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

Type:

Journal

Info:

RSC Adv., 2019, 9, 592-598

Date:

2018-12-03

DOI:

http://dx.doi.org/10.1039/C8RA07652A

Author Information

Name	Institution
Chin-I Wang	National Taiwan University
Teng-Jan Chang	National Taiwan University
Chun-Yuan Wang	National Taiwan University
Yu-Tung Yin	National Taiwan University
Jing-Jong Shyue	National Taiwan University
Hsin-Chih Lin	Academia Sinica
Miin-Jang Chen	National Taiwan University

Films

Plasma ZrO₂

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

TDMAZr, (Me₂N)₄Zr, [(CH₃)₂N]₄Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide

CAS#: 19756-04-8

O₂, Oxygen

CAS#: 7782-44-7

Deposition Temperature = 250C

Plasma Al₂O₃

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

O₂, Oxygen

CAS#: 7782-44-7

Deposition Temperature = 250C

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

N₂, Nitrogen

CAS#: 7727-37-9

H₂, Hydrogen

CAS#: 1333-74-0

Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Chemical Binding

Analysis: XPS, X-ray Photoelectron Spectroscopy

Diagnostic: -

Characteristic: Images

Analysis: TEM, Transmission Electron Microscope

Diagnostic: FEI Tecnai G2 F20 S-Twin

Characteristic: Interfacial Layer

Analysis: TEM, Transmission Electron Microscope

Diagnostic: FEI Tecnai G2 F20 S-Twin

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Analysis: XRD, X-Ray Diffraction

Diagnostic: -

Characteristic: CET, capacitance equivalent thickness

Analysis: C-V, Capacitance-Voltage Measurements