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Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

Type:
Journal
Info:
Applied Surface Science Volume 324, 1 January 2015, Pages 662-668
Date:
2014-11-03
DOI:
http://dx.doi.org/10.1016/j.apsusc.2014.11.009

Author Information

Name Institution
Jhih-Jie HuangNational Taiwan University
Yi-Jen TsaiNational Taiwan University
Meng-Chen TsaiNational Taiwan University
Li-Tien HuangNational Taiwan University
Min-Hung LeeNational Taiwan Normal University
Miin-Jang ChenNational Taiwan University

Films

Plasma ZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma ZrON

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
O2, Oxygen
CAS#: 7782-44-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Si(100)

Notes

Ultratech Fiji PEALD N-doped ZrO2 with improved high-k dielectric properties.
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