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Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

Type:
Journal
Info:
Journal of Physics: Conference Series 652 (2015) 012034
Date:
2015-09-06
DOI:
http://dx.doi.org/10.1088/1742-6596/652/1/012034

Author Information

Name Institution
V. A. TaralaNorth-Caucasus Federal University
A. S. AltakhovNorth-Caucasus Federal University
V. Ya. MartensNorth-Caucasus Federal University
S. V. LisitsynNorth-Caucasus Federal University

Films

Plasma AlN

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 150-280C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Smartlab

Characteristic: Transmittance
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: FSM-1201 FTIR

Substrates

Si(111)

Notes

399