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Crystalline growth of AlN thin films by atomic layer deposition

Type:
Conference Proceedings
Info:
Journal of Physics: Conference Series 757 (2016) 012003
Date:
2016-09-06
DOI:
https://doi.org/10.1088/1742-6596/757/1/012003

Author Information

Name Institution
S SadeghpourKU Leuven
F CeyssensKU Leuven
R PuersKU Leuven

Films

Plasma AlN

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 280-300C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Thickness
Analysis: Reflectometry
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

Si(100)
Glass
Ti

Notes

850