A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
Info:
Journal of Applied Physics 119, 084507 (2016)
Author Information
Films
Film/Plasma Properties
Analysis: XPS, X-ray Photoelectron Spectroscopy
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Analysis: C-V, Capacitance-Voltage Measurements
Analysis: C-V, Capacitance-Voltage Measurements
Analysis: C-V, Capacitance-Voltage Measurements
Analysis: C-V, Capacitance-Voltage Measurements
Analysis: I-V, Current-Voltage Measurements
Analysis: TEM, Transmission Electron Microscope
Substrates
Notes