3DMAAl, (Me₂N)₃Al, (Me₂N)₆Al₂, Tris (DiMethylAmido) Aluminum(III), CAS# 32093-39-3

Your search for publications using this chemistry returned 4 record(s).

Number	Title
1	A comparative study of AlN and Al₂O₃ based gate stacks grown by atomic layer deposition on InGaAs
2	Experimental and theoretical determination of the role of ions in atomic layer annealing
3	Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
4	Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

3DMAAl, (Me2N)3Al, (Me2N)6Al2, Tris (DiMethylAmido) Aluminum(III), CAS# 32093-39-3