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Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor

Type:

Journal

Info:

Journal of Vacuum Science & Technology A 35, 01B128 (2017)

Date:

2016-12-05

DOI:

http://dx.doi.org/10.1116/1.4972469

Author Information

Name	Institution
Sydney C. Buttera	Carleton University
David J. Mandia	Carleton University
Sean T. Barry	Carleton University

Films

Thermal Al₂O₃

Hardware used: Picosun SUNALE R-150B

3DMAAl, (Me₂N)₃Al, (Me₂N)₆Al₂, Tris (DiMethylAmido) Aluminum(III)

CAS#: 32093-39-3

CAS#: 7732-18-5

Deposition Temperature = 250C

Plasma AlN

Hardware used: Picosun R200

3DMAAl, (Me₂N)₃Al, (Me₂N)₆Al₂, Tris (DiMethylAmido) Aluminum(III)

CAS#: 32093-39-3

CAS#: 7727-37-9

Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Precursor Characterization

Analysis: TGA, Thermo Gravimetric Analysis

Diagnostic: TA Instruments Q500 with EGA furnace

Characteristic: Chemical Composition, Impurities

Analysis: XPS, X-ray Photoelectron Spectroscopy

Diagnostic: Specs

Substrates

Si(100)

Notes

Lots of O in the AlN.
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