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Moshe Eizenberg Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Moshe Eizenberg returned 10 record(s).

NumberTitle
1Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
2Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
3Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
6Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
7Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
8Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
9A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
10Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor