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Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 35, 011205 (2017)
Date:
2016-12-12
DOI:
http://dx.doi.org/10.1116/1.4973300

Author Information

Name Institution
Igor KrylovTechnion-Israel Institute of Technology
Boaz PokroyTechnion-Israel Institute of Technology
Dan RitterTechnion-Israel Institute of Technology
Moshe EizenbergTechnion-Israel Institute of Technology

Films

Thermal Al2O3

Hardware used: Picosun SUNALE R-150B
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Plasma AlN

Hardware used: Picosun SUNALE R-150B
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5600 ESCA

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Substrates

InGaAs

Notes

885