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Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 7, JULY 2014
Date:
2014-05-08
DOI:
http://dx.doi.org/10.1109/LED.2014.2321003

Author Information

Name Institution
Ting-En HsiehNational Chiao Tung University

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Thermal Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Threshold Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: -
Diagnostic: -

Substrates

Notes

253