About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition

Type:
Journal
Info:
Surface & Coatings Technology 347 (2018) 181 - 190
Date:
2018-04-11
DOI:
https://doi.org/10.1016/j.surfcoat.2018.04.031

Author Information

Name Institution
L. TianGrenoble Alps University (UGA)
S. PontonGrenoble Alps University (UGA)
M. BenzGrenoble Alps University (UGA)
Alexandre CrisciGrenoble Alps University (UGA)
R. ReboudGrenoble Alps University (UGA)
G. GiustiSIL'TRONIX Silicon Technologies
Fabien VolpiGrenoble Alps University (UGA)
L. RapenneGrenoble Alps University (UGA)
Christophe ValléeGrenoble Alps University (UGA)
M. PonsGrenoble Alps University (UGA)
A. MantouxGrenoble Alps University (UGA)
C. JiménezGrenoble Alps University (UGA)
Elisabeth BlanquetGrenoble Alps University (UGA)

Films

Plasma AlN

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2, Hydrogen
CAS#: 1333-74-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 200-400C

Thermal AlN

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 325-400C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Horiba End-point EV-140C

Characteristic: Chemical Composition, Impurities
Analysis: EPMA, Electron Probe Micro Analyzer
Diagnostic: Cameca SX-51

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: JEOL 2010F

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Ultra 55

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Advance

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: JEOL 2010F

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Siemens D5000

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Siemens D5000

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Nanofilm EP3SE

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Custom

Substrates

SiC
Si(100)
BSG, BoroSilicate Glass

Notes

1526